features ? high power gain applications ? high frequency ap plication ? hf,vhf band amplifier application m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 35 v v ceo collector - emitter voltage 30 v v ebo emitter - base voltage 4 v i c collector current 50 m a p c collector power dissipation 150 m w r ja thermal resistance from j u n ction to a mbient 833 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v ( br) cbo i c = 1 00 a , i e =0 35 v collector - emitter breakdown voltage v (br) c e o i c = 1 00 a , i b =0 30 v emitter - base breakdown voltage v (br)eb o i e = 10 0 a , i c =0 4 v collector cut - off current i cbo v cb = 3 0 v, i e =0 0.1 a collector cut - off current i c e o v c e = 25 v, i b =0 0.2 a emitter cut - off current i ebo v eb = 4 v, i c =0 1 a dc current gain h fe v ce = 1 2 v, i c = 2 m a 40 240 collector - emitter saturation voltage v ce(sat) i c = 1 0m a, i b = 1 ma 0.4 v b ase - emitter saturation voltage v b e(sat) i c = 10m a, i b = 1 ma 1 v transition frequency f t v ce = 1 0 v,i c = 1 ma 100 mhz classification of h fe rank r o y range 40 C 80 70 C 140 120 C 240 marking rr ro ry so t C 23 1. base 2. emitter 3. collector KTC3879 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
|
